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DSA0096312.pdf
Manufacturer
Infineon Technologies
Partial File Text
BSO211P H OptiMOS® P-Power-Transistor Product Summary Features V DS · dual P-Channel in SO8 · 150°C operating temperature V V GS=4.5 V 67 m V GS=2.5 V R DS(on),max
Type
Original
ECAD Model
Part Details
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User Tagged Keywords
BSO211P
IEC61249-2-21