DSA2IH00202401.pdf

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Partial File Text POWER MOS FET 2. L2-tt-MOSV (Vgs=4V drive type) Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. 15% les
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DSA2IH00202401.pdf preview Download Datasheet