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DSAE0010747.pdf
Manufacturer
Infineon Technologies
Partial File Text
IPP028N08N3 G IPI028N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V DS 2.8 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-chann
Type
Original
ECAD Model
Part Details
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User Tagged Keywords
028N08N
IPP028N08N3
IPP02CN08N
PG-TO220-3