DSAZIHA100056506.pdf
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American Microsemiconductor
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2N3659 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)170
V(BR)CBO (V)220
I(C) Max. (A)500m
Absolute Max. Power Diss. (W)4.0
Maximum Operating Temp (øC)175þ
I(CBO) Max. (A)10nÃ
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Original
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