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    DSAZIHA100010193.pdf

    • Advanced Semiconductor
    • 25 Watts, 50V, 1200-1400MHz 200!s, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar ap
    • Original
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    DSAZIHA100010193.pdf preview Download Datasheet

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