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DSAZIHA1000110592.pdf
Manufacturer
Infineon Technologies
Partial File Text
PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 â 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power am
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