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    Scans-00143350.pdf

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    • SAMSUNG SEMICONDUCTOR INC 14E D PNP tPIIAXI TIP105/106/107 SILICON DARLINGTON TRANSISTOR ) 1 7^1,4142 000772a fi I HAT. " HIGH DC CURRENT GAIN MIN hFE=1000 @ Vce = -4V, lc = -3A COLLECTOR-EMI
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    2A 80v complementary transistor darlington npn tip 102 darlington tip 102 T1P105 T1P110 T1P111 T1P115 tip 105 TIP105 TIP106 TIP107 transistor tip 107 VCS-60V
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