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    DSAISS0006688.pdf

    • Central Semiconductor
    • PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size 15.4 x 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad A
    • Original
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    DSAISS0006688.pdf preview Download Datasheet

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