DSAZIHA100017609.pdf
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American Microsemiconductor
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2N1307+JAN Transistors
Ge PNP Lo-Pwr BJT
Military/High-RelY
V(BR)CEO (V)
V(BR)CBO (V)30
I(C) Max. (A)300m
Absolute Max. Power Diss. (W)150m
Maximum Operating Temp (øC)85õ
I(CBO) Max. (A)6.0u
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Original
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