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    DSAEDA000122929.pdf

    • IXYS
    • Preliminary Technical Information TrenchMVTM Power MOSFET IXTA152N085T IXTP152N085T VDSS ID25 RDS(on) = 85 V = 152 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rate
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