DSASW0053898.pdf
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International Rectifier
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PD - 97490
IRFH5210PbF
HEXFET® Power MOSFET
VDS
100
14.9
RDS(on) max
(@VGS = 10V)
V
m
Qg (typical)
RG (typical)
39
nC
1.8
ID
55
A
(@Tc(Bottom) = 25°C)
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Original
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