DSA2IH00206632.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Features · Low interm odulation distortion TIM6472-7L - IM3 = -45 dB c at Po = 28.5 dBm, - Single c
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DSA2IH00206632.pdf preview Download Datasheet