DSA2IH00203140.pdf

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Partial File Text SILICON NPN EPITAXIAL TY P E 2SC4685 U nit in mm STROBE FLASH APPLICATIONS. M E D IU M POW ER AMPLIFIER APPLICATIONS. · · · High DC C urrent Gain : hF E (l) = 800-3200 ( V = 2V, Ic = 0.5A
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ECAD Model

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