DSAUD0058075.pdf

Manufacturer Renesas Technology
Partial File Text RJK2017DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1589-0400 Rev.4.00 Dec 02, 2009 Features · Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25
Type Original
ECAD Model
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