DSA2IH00101760.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transisfor) is designed for use in L to K b
Type Scan
ECAD Model

DSA2IH00101760.pdf preview Download Datasheet