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    DSAEDA00039425.pdf

    • ON Semiconductor
    • MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geomet
    • Original
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    DSAEDA00039425.pdf preview Download Datasheet

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