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    DSAEDA000123591.pdf

    • IXYS
    • High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 42A VCE(sat) ≤ 2.8V IXBH42N170 IXBT42N170 TO-247 (IXBH) Symbol Test Conditions Maximum
    • Original
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    DSAEDA000123591.pdf preview Download Datasheet

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