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    DSA2IH0073819.pdf

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    • Insulated Gate Bipolar Transistors (IGBT) "S" and "L" series with improved SCSOA capability Type Vms V c ;. VOtlsst) max. V 3.5 2.5 3.5 2.7 3.0 4.0 3.0 2.7 3.0 3.0 4.0 3.5 4.0 C w
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