DSA2IH00125977.pdf

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Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIALTRANSISTOR FEATURES OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F= 1.9 GHz, V c e = 3.6 V, Class AB, Duty 1/8 4 PIN MINI MOLD PACKAGE: NE69039
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DSA2IH00125977.pdf preview Download Datasheet