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    DSA00389703.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz HIGH GAIN HERMETIC
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    DSA00389703.pdf preview Download Datasheet

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    TIM8596-2

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