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    Scans-00143422.pdf

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    • IRF9Z24/20 P-CHANNEL POWER MOSFETS FEATURES • Lower Rds(on) • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitan
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    • IRF9Z20 IRF9Z20 IRF9Z20PBF

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    IRF9Z20 IRF9Z24 P-Channel Power MOSFETS

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