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    DSAIHSC000104258.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs (Chip Form) Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for K
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    DSAIHSC000104258.pdf preview Download Datasheet

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