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Scans-00156795.pdf
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March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES ⢠60V, 15A, rds(on)=80mQ @Vgs=1 0V. Rds(on)=85itiQ @Vgs=5.0V. ⢠Super high dense cell design for extremely low Rds(on
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ECAD Model
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