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    DSAISS00085510.pdf

    • Toshiba
    • 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) • Low satur
    • Original
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