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    DSAIH00084037.pdf

    • Cree
    • CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, hig
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    DSAIH00084037.pdf preview Download Datasheet

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