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DSA0076711.pdf
Manufacturer
Toshiba
Partial File Text
TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 39.5 dBm at 8.5 GHz to 9.6 GHz · High gain - G1dB = 6.0 dB at 8.5 GH
Type
Original
ECAD Model
Part Details
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TIM8596-8
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