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DSA2IH00128034.pdf
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PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF FEATURES LOW NOISE: Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V
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ECAD Model
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UPA832TF-T1
UPA832TF-T1
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