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DSA2IH00163628.pdf
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IRF9Z34/Z35 IRF9Z30/Z32 FEATURES · Lower Rds < on ) P-CHANNEL POWER MOSFETS · · · · Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input cap
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ECAD Model
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1RF9Z30
IRF9Z30
irf9z34
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