DSA2IH00173724.pdf

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Partial File Text 7 SGS-THOMSON */ = 7 #TM M(MI[Li©ïrGMO(gS IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE T
Type Scan
ECAD Model

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