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    DSAZIHA100017487.pdf

    • American Microsemiconductor
    • 2N1175 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25ã V(BR)CBO (V)35 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)10u
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