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    DSAISS00072867.pdf

    • STMicroelectronics
    • STGD19N40LZ EAS 180 mJ - 390 V internally clamped IGBT Datasheet - production data Features  AEC Q101 compliant  180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH TAB  ESD gat
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