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DSAISS00072867.pdf
Manufacturer
STMicroelectronics
Partial File Text
STGD19N40LZ EAS 180 mJ - 390 V internally clamped IGBT Datasheet - production data Features ï· AEC Q101 compliant ï· 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH TAB ï· ESD gat
Type
Original
ECAD Model
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