DSA2IH00205888.pdf

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Partial File Text TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA FEATURES: H IG H POWER P1dB=28dBm C H IP FORM MICROWAVE POWER GaAs FET JS9P05-AS IHIGH GAIN f = 38GHz GldB= 6. 5dB f =38GHz RF PERF
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DSA2IH00205888.pdf preview Download Datasheet