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    DSA00224712.pdf

    • Mitsubishi
    • MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifi
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    DSA00224712.pdf preview Download Datasheet

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