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    DSA00116891.pdf

    • Hitachi Semiconductor
    • 2SK2529 Silicon N Channel MOS FET Application TO­220CFM High speed power switching Features · Low on­resistance RDS(on) = 7 m typ. · High speed switching · 4 V gate drive device can b
    • Original
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    DSA00116891.pdf preview Download Datasheet

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    2SK2529

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