DSAIH000128578.pdf

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Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES: H IG H POW ER p1dB = 2 1 5 dBm at f = 15 G H z H IG H G AIN GjdB = 9 '0 dB at f = 15 GHz JS8850A-AS SUI
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DSAIH000128578.pdf preview Download Datasheet