DSAAQ0030766.pdf
- Renesas Electronics
- Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current Hig
- Original
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