DSA2IH00206663.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - PidB = 39.5 dBm at 8.5 GHz to 9.6 GHz · High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz · Br
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DSA2IH00206663.pdf preview Download Datasheet