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DSAIHSC000104756.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs (C-Band) Features ⢠High power â PidB = 39 dBm at 5.0 GHz to 5.3 GHz ⢠High gain - G-idB = 9.0 dB at 5.0
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ECAD Model
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