DSA00598244.pdf

Manufacturer Renesas Technology
Partial File Text RQJ0303PGDQA Silicon P Channel MOS FET Power Switching REJ03G1272-0300 Rev.3.00 Dec 21, 2005 Features · Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) · Low drive current · High
Type Original
ECAD Model
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