DSA2IH0099160.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 3 9 V6 4 7 2A 6 .4 -- 7.2GHZ BAND 8W IN TE R N A L L Y M ATCH ED GaAs F E T DESCRIPTION The M G F C 3 9 V 6 4 7 2 A isan internally im pedance-m atched
Type Scan
ECAD Model

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