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    DSAZIHA1000288856.pdf

    • Infineon Technologies
    • BSB012NE2LXI OptiMOSTM Power-MOSFET Product Summary Features VDS • 100% avalanche tested 1.2 mW 180 A 39 nC Qg(0V..10V) • Low profile (<0.7 mm) RDS(on),ma
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