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    DASF0037649.pdf

    • Toshiba
    • 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm l High Capacitance Ratio : C0.5V/C2.5V = 2.5 (Typ.) l Low Series Resistance : rs = 0.35 (Typ
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