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    DSAZIHA100024113.pdf

    • American Microsemiconductor
    • 2N1809 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)50º V(BR)CBO (V)50 I(C) Max. (A)10 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30m¥×
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