DSA0074424.pdf

Manufacturer Samsung Electronics
Partial File Text SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate C
Type Original
Part Details Part pricing, stock, data attributes from Findchips.com

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