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    DSASW00201764.pdf

    • Infineon Technologies
    • Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 ­ 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond
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