DSA00187259.pdf

Manufacturer -
Partial File Text CEP10N4/CEB10N4 Sep. 2002 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 450V , 10A , RDS(ON)=700m VGS=10V. Super high dense cell design for extremely low RDS(ON). High powe
Type Original
ECAD Model

DSA00187259.pdf preview Download Datasheet