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Scans-00151827.pdf
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TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs (Chip Form) Features ⢠High power - P1dB = 24dBmatf = 15 GHz ⢠High gain - G1dB = 8dBatf= 15 GHz ⢠Suitable for Ku-Band amp
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ECAD Model
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JS8851-AS
MW1011
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