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DSA00759910.pdf
Manufacturer
Toshiba
Partial File Text
SSM3K125TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K125TU High-Speed Switching Applications · · 4.0 V drive Low ON-resistance: Unit: mm Ron = 181 m (max) (@VGS = 4 V) Ron
Datasheet Type
Original
ECAD Model
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SSM3K125TU