DSAE0013448.pdf

Manufacturer Infineon Technologies
Partial File Text IPS12CN10L G IPP12CN10L G OptiMOS®2 Power-Transistor Product Summary Features V DS 12 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel
Type Original
ECAD Model
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DSAE0013448.pdf preview Download Datasheet