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DSAZIHA100083722.pdf
Manufacturer
Cree
Partial File Text
PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Creeâs CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency
Datasheet Type
Original
ECAD Model
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